| 发明名称 |
ZINC OXIDE SPUTTERING TARGET AND METHOD FOR PRODUCING SAME |
| 摘要 |
Provided is a zinc oxide sputtering target, which can effectively suppress the occurrence of break or crack in the target during sputtering to enable production of a zinc oxide transparent conductive film with high productivity. The zinc oxide sputtering target is composed of a zinc oxide sintered body comprising zinc oxide crystal grains, wherein the zinc oxide sputtering target has a sputter surface having a (100) crystal orientation degree of 50% or more. |
| 申请公布号 |
US2014328747(A1) |
申请公布日期 |
2014.11.06 |
| 申请号 |
US201414305267 |
申请日期 |
2014.06.16 |
| 申请人 |
NGK INSULATORS, LTD. |
发明人 |
YOSHIKAWA Jun;IMAI Katsuhiro;KONDO Koichi |
| 分类号 |
H01J37/34;C04B35/64;C01G9/02;C04B35/453 |
主分类号 |
H01J37/34 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A zinc oxide sputtering target composed of a zinc oxide sintered body comprising zinc oxide crystal grains, wherein the zinc oxide sputtering target has a sputter surface having a (100) crystal orientation degree of 50% or more. |
| 地址 |
Nagoya-shi JP |
