SEMICONDUCTOR STRUCTURE FOR ELECTROMAGNETIC INDUCTION SENSING AND A METHOD OF MANUFACTURING THE SAME

摘要

A semiconductor structure for electromagnetic induction sensing and a method for manufacturing the same are provided: forming the Hall sensor in a first semiconductor fabrication; forming the passivation layer above the Hall sensor to cover the Hall sensor according to the first semiconductor fabrication; and forming the current-carrying layer above the passivation layer in a second semiconductor fabrication to form the semiconductor structure for electromagnetic induction sensing. The current-carrying layer carries the current to be sensed; and the Hall sensor senses the magnetic field generated. The Hall sensor generates a voltage or a current signal proportional to the strength of the current to be sensed.

主权项

1. A semiconductor structure for electromagnetic induction sensing comprising:
at least a Hall sensor sensing a magnetic field generated by a current to be sensed; a passivation layer disposed on the Hall sensor, the passivation layer covering the Hall sensor; and a current-carrying layer disposed on the passivation layer, the current-carrying layer carrying the current to be sensed and being separated from the Hall sensor within an effective distance.