SEMICONDUCTOR LIGHT EMITTING DEVICE WITH THICK METAL LAYERS

摘要

A device according to embodiments of the invention includes a semiconductor structure including a light emitting layer sandwiched between an n-type region and a p-type region and first and second metal contacts, wherein the first metal contact is in direct contact with the n-type region and the second metal contact is in direct contact with the p-type region. First and second metal layers are disposed on the first and second metal contacts, respectively. The first and second metal layers are sufficiently thick to mechanically support the semiconductor structure. A portion of a sidewall the device adjacent to one of the first and second metal layers is reflective.

主权项

1. A device comprising:
a semiconductor structure comprising a light emitting layer sandwiched between an n-type region and a p-type region; and first and second metal contacts, wherein the first metal contact is in direct contact with the n-type region and the second metal contact is in direct contact with the p-type region; first and second metal layers disposed on the first and second metal contacts, respectively, wherein the first and second metal layers are sufficiently thick to mechanically support the semiconductor structure and wherein a portion of a sidewall of the device adjacent to one of the first and second metal layers is reflective.