| 发明名称 |
PROCESS AND DEVICE FOR FORMING A GRAPHENE LAYER |
| 摘要 |
The invention concerns a method of forming a graphene layer involving: heating a support layer in a reaction chamber; and forming the graphene layer on a surface of the support layer by: a) during a first time period, introducing into the reaction chamber an organic compound gas to cause a formation of carbon atoms on the surface; b) during a second time period after the first time period, reducing a rate of introduction of the organic compound gas into the reaction chamber and introducing into the reaction chamber a further gas, wherein the further gas is a carbon etching gas; and repeating a) and b) one or more times. |
| 申请公布号 |
US2014326700(A1) |
申请公布日期 |
2014.11.06 |
| 申请号 |
US201313887424 |
申请日期 |
2013.05.06 |
| 申请人 |
CENTRE NATIONAL DE LA RECHERCHE SCIENTFIQUE |
发明人 |
BOUCHIAT Vincent;CORAUX Johann;HAN Zheng |
| 分类号 |
C01B31/04 |
主分类号 |
C01B31/04 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of forming a graphene layer comprising:
heating a support layer in a reaction chamber; and forming said graphene layer on a surface of said support layer by:
a) during a first time period, introducing into said reaction chamber an organic compound gas to cause a formation of carbon atoms on said surface;b) during a second time period after said first time period, reducing a rate of introduction of said organic compound gas into said reaction chamber and introducing into said reaction chamber a further gas, wherein said further gas is a carbon etching gas; andrepeating a) and b) one or more times. |
| 地址 |
Paris FR |
