发明名称 EXTENDED LIFETIME ION SOURCE
摘要 <p>An ion source includes an ion source chamber, a cathode disposed within the ion source chamber and configured to emit electrons to generate an arc plasma, and a repeller configured to repell electrons back into the arc plasma. The ion source chamber and cathode may comprise a refractory metal. The ion source chamber further includes a gas source configured to provide a halogen species to the ion source chamber. The reactive insert is interoperative with the halogen species to yield a first etch rate of the refractory metal material within the ion source chamber under a first set of operating conditions that is less than a second etch rate of the refractory metal material within the ion source chamber under the first set of operating conditions when the reactive insert is not disposed within the ion source chamber.</p>
申请公布号 WO2014179677(A1) 申请公布日期 2014.11.06
申请号 WO2014US36558 申请日期 2014.05.02
申请人 VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC. 发明人 BILOIU, COSTEL;SPORLEDER, DAVID P.;SCHEUER, JAY;BASSOM, NEIL J.
分类号 H01J37/08;H01J27/02;H01L21/425 主分类号 H01J37/08
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