| 摘要 |
<p>PROBLEM TO BE SOLVED: To improve the efficiency of a CMOS device while reducing the size.SOLUTION: A semi-metal structure includes a LaAlO-SrTiOheterostructure having two-dimensional hole gas 21 and two-dimensional electron gas 23. An electronic device includes a gate electrode provided on the surface of a SrTiObase layer, a source electric contact, and a drain electric contact. The source electric contact and drain electric contact can come into ohmic contact with both the two-dimensional hole gas 21 and two-dimensional electron gas 23.</p> |
