MASK PATTERN FOR HOLE PATTERNING AND METHOD FOR FABRICATING SEMICONDUCTOR DEVICE USING THE SAME

摘要

A method for fabricating a semiconductor device includes forming an etching target layer over a substrate including a first region and a second region; forming a hard mask layer over the etching target layer; forming a first etch mask over the hard mask layer, wherein the first etch mask includes a plurality of line patterns and a sacrificial spacer layer formed over the line patterns; forming a second etch mask over the first etch mask, wherein the second etch mask includes a mesh type pattern and a blocking pattern covering the second region; removing the sacrificial spacer layer; forming hard mask layer patterns having a plurality of holes by etching the hard mask layer using the second etch mask and the first etch mask; and forming a plurality of hole patterns in the first region by etching the etching target layer using the hard mask layer patterns.

主权项

1. A mask pattern suitable for patterning holes in a cell matrix region, the mask pattern comprising:
a plurality of lower level line patterns formed over a hard mask layer; a plurality of upper level line patterns extending in a direction crossing with the lower level line patterns, wherein the plurality of upper level line patterns are located at a vertically higher level than the plurality of lower level line patterns; and a blocking pattern covering an edge region of the cell matrix region.