NITRIDE SEMICONDUCTOR PHOTOCATALYST AND NITRIDE SEMICONDUCTOR ELECTRODE

摘要

PROBLEM TO BE SOLVED: To provide a nitride semiconductor photocatalyst capable not only of shifting the lower limit of the absorption wavelength toward the longer wavelength side but also of facilitating the mobilization of a carrier.SOLUTION: A group III nitride semiconductor layer 13 is interposed between the principal plane 17a and InGaN region 15 of a support medium 17. Since the InGaN region 15 is capable of absorbing light having wavelengths longer than the band gap wavelength of GaN, the lower limit of the absorption wavelength of a nitride semiconductor photocatalyst 11 can be shifted toward the longer wavelength side. Since the piezo dielectric polarization Pof the InGaN region 15 possesses a component ranging from the InGaN region 15 to the group III nitride semiconductor layer 13, furthermore, electrons of electron-positive hole pairs generated within the InGaN region 15 stream from the InGaN region 15 toward the group III nitride semiconductor layer 13. Positive holes stream from the group III nitride semiconductor layer 13 toward the InGaN region 15. The mobilization of the carrier within the nitride semiconductor photocatalyst 11 can therefore be facilitated.