| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a semiconductor laser having a large light-emitting gain.SOLUTION: A semiconductor laser comprises an active layer 5 including multiple quantum dots 7 between an n-type semiconductor substrate 1 and a p-type semiconductor substrate 3 and a matrix 9 arranged to surround the quantum dots 7. The quantum dots 7 have a maximum diameter within a range of 10-30 nm and variation in maximum diameters is within 2 nm. Because of this, an energy level difference is increased to improve a gain of a wavelength closest to a center wavelength which contributes to light emission.</p> |
