| 摘要 |
<p>The present invention discloses a thin film deposition apparatus comprising: a reaction chamber; a substrate support unit disposed inside the reaction chamber and configured to support a substrate; a shower head disposed above the substrate support unit to supply a process gas to the substrate for generating plasma; high-frequency power being applied to the upper plate to excite the process gas in order to generate the plasma; an exhaust unit to discharge the process gas and reaction by-products, which are unreacted in the reaction chamber, to the outside, wherein the exhaust unit includes: exhaust holes provided to a bottom wall to be symmetrical with respect to the center of the bottom wall of the reaction chamber; and an exhaust member connected to the exhaust holes by an exhaust line and acting the sound pressure in the exhaust holes.</p> |
