| 摘要 |
PROBLEM TO BE SOLVED: To reduce time necessary for second plasma processing to remove a by-product produced by first plasma processing for forming an uneven structure in substrate plasma processing for forming, on a surface of a sapphire substrate, the uneven structure corresponding to a mask pattern. SOLUTION: A substrate plasma processing method comprises: a first plasma processing step of executing plasma processing on a sapphire substrate by arranging the sapphire substrate in a chamber and supplying a mixed gas obtained by mixing any one of a CF<SB POS="POST">4</SB>gas, an SF<SB POS="POST">6</SB>gas and an NF<SB POS="POST">3</SB>gas with a BCl<SB POS="POST">3</SB>-based gas into the chamber to form, on a surface of the sapphire substrate, an uneven structure corresponding to a mask pattern; and a second plasma processing step of executing plasma processing by supplying a process gas into the chamber to remove a by-product adhered to the inside of the chamber by execution of the first plasma processing step. COPYRIGHT: (C)2013,JPO&INPIT |
