| 摘要 |
PROBLEM TO BE SOLVED: To provide a group III-V compound semiconductor crystal and an optical semiconductor element that prevent a reduction in the p-type carrier concentration due to pile-up of an n-type impurity, and to provide a method of manufacturing them. SOLUTION: A p-type group III-V compound semiconductor crystal is regrown on a p-InP layer 13a exposed in the atmosphere by sequentially stacking a p-InP layer 14a containing Zn and Sb and a p-InP layer 14b containing Zn. Additionally, the Zn concentration in the p-InP layer 14a is made higher than that in the p-InP layer 14b. COPYRIGHT: (C)2012,JPO&INPIT |
