MOS DEVICES WITH STRAIN BUFFER LAYER AND METHODS OF FORMING THE SAME

摘要

A metal oxide semiconductor device comprises a substrate, insulation areas extended to the substrate, and semiconductor pins which are higher than the top surface of the insulation areas. Each semiconductor pin has a first lattice constant. A semiconductor area which has a second lattice constant different from the first lattice constant includes side wall portions of the facing surfaces of the semiconductor pins and top portions of the semiconductor pins. A strain buffer layer is located between the semiconductor pin and the semiconductor area to touch the semiconductor pin and the semiconductor area and consists of oxide.