| 摘要 |
A light emitting device may be provided that includes a conductive support member (310,410); a first conductive layer (320,420) disposed on the conductive support member; a second conductive layer (330,430) disposed on the first conductive layer; a light emitting structure including a second semiconductor layer (350,450) formed on the second conductive layer, an active layer (360,460) formed on the second semiconductor layer, a first semiconductor layer (340,440) formed on the active layer and an insulation layer (370,470). The first conductive layer includes at least one via (320a,420a) penetrating the second conductive layer, the second semiconductor layer and the active layer and projecting into a certain area of the first semiconductor layer. The first semiconductor layer includes an ohmic contact layer (341a,441a) formed on or above the conductive via. The insulation layer (370,470) is formed between the first conductive layer and the second conductive layer and is formed on the side wall of the via (320a,420a). |
