| 摘要 |
<p>A patterning method comprising the steps of: the first step of disposing at least one silane compound selected from the group consisting of a silicon hydride compound and a silicon halide compound in the space between a substrate and a patterned mold; and the second step of subjecting the silane compound to at least one treatment selected from a heat treatment and an ultraviolet exposure treatment. A pattern composed of silicon can be formed by carrying out the second step in an inert atmosphere or a reducing atmosphere and a pattern composed of silicon oxide can be formed by carrying out at least part of the second step in an oxygen-containing atmosphere.</p> |
