| 摘要 |
<p>A superposed wafer is separated to a processing target wafer and a supporting wafer while being heated. Then, an adhesive on a joint surface of the processing target wafer is removed by supplying an organic solvent onto the joint surface of the processing target wafer. Then, an oxide film formed on the predetermined pattern on the joint surface of the processing target wafer is removed by supplying acetic acid to the joint surface of the processing target wafer. Then, the joint surface of the processing target wafer is inspected. Then, based on an inspection result, the adhesive on the joint surface of the processing target wafer is removed and the oxide film formed on the predetermined pattern on the joint surface of the processing target wafer is removed.</p> |
