| 摘要 |
PROBLEM TO BE SOLVED: To provide a power semiconductor device which can reduce resistance during conduction while maintaining strength. SOLUTION: The semiconductor device 10 includes: a substrate region 1; a drift region 2, which is arranged on the substrate region 1, is formed of semiconductor material containing silicon carbide, and has a plurality of recessed parts; an anode electrode 3 arranged on a side wall; and a cathode electrode 4 arranged on a side wall so as to face to the anode electrode 3 with the side wall of the recessed part interposed therebetween, and is insulated from the anode electrode 3. COPYRIGHT: (C)2010,JPO&INPIT |
