| 摘要 |
<p>A method of fabricating a semiconductor device comprising one drain extended MOS transistor and at least one other metal oxide on silicon transistor. The two transistors have the same polarity and each have an equivalent gate oxide thickness 13. A source extension implant type is applied to one of the transistors. The drain extended MOS transistor comprises a gate 30, which is only lightly doped, and source and drain implants 10 and 12. The source extension implants may comprise both a core transistor LDD implant 31, with pocket implants 32 and an I/O transistor implant 33.</p> |
