发明名称 |
Semiconductor Structure comprising Source/Drain Region, Contact Hole and Method of Forming the Same. |
摘要 |
An S/D region including a first region and a second region is provided. The first region is located, with at least a partial thickness, in the substrate. The second region is formed on the first region and made of a material different from that of the first region. A method for forming an S/D region is further provided, and the method includes: forming trenches at both sides of a gate stack structure in a substrate; forming a first semiconductor layer, wherein at least a part of the first semiconductor layer is filled into the trenches; and forming a second semiconductor layer on the first semiconductor layer, wherein the second semiconductor layer is made of a material different from that of the first semiconductor layer. A contact hole and a forming method thereof are also provided which may increase the contact area between a contact hole and a contact region, and reduce the contact resistance. |
申请公布号 |
GB2493226(B) |
申请公布日期 |
2014.11.05 |
申请号 |
GB20110022081 |
申请日期 |
2011.02.18 |
申请人 |
INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OFSCIENCES |
发明人 |
HAIZHOU YIN;HUILONG ZHU;ZHIJIONG LUO |
分类号 |
H01L21/768;H01L21/02;H01L21/336;H01L29/08;H01L29/66 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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