| 摘要 |
MRAM cell (1) comprising a magnetic tunnel junction (2) including a reference layer (21), a storage layer (23) having a storage magnetization (230), a tunnel barrier layer (22) comprised between the reference and the storage layers (21, 23); and an antiferromagnetic layer (24) exchange-coupling the storage layer (23) such as to pin the storage magnetization (230) at a low temperature threshold and free it at a high temperature threshold; the storage layer (23) comprising a first ferromagnetic layer (231) in contact with the tunnel barrier layer (22), a second ferromagnetic layer (234) in contact with the antiferromagnetic layer (24), and a low-magnetization storage layer (235) comprising a ferromagnetic material and a non-magnetic material. The MRAM cell can be written with improved reliability. |
