发明名称 磁気メモリセルの磁気抵抗効果増加方法
摘要 The dR/R ratios of TMR and GMR devices, having a FeCo/NiFe type of free layer, have been significantly increased by inserting a suitable surfactant layer within (as opposed to above or below) the free layer. Our preferred surfactant material has been oxygen but similar-acting materials could be substituted. The concept can be applied to GMR CPP, CIP, and CCP sensor designs.
申请公布号 JP5618463(B2) 申请公布日期 2014.11.05
申请号 JP20080098051 申请日期 2008.04.04
申请人 发明人
分类号 H01L27/105;H01L21/8246;H01L43/08;H01L43/10;H01L43/12 主分类号 H01L27/105
代理机构 代理人
主权项
地址