| 摘要 |
PROBLEM TO BE SOLVED: To provide a vapor deposited film with stable film quality in the width direction when depositing an inorganic compound layer on a base material comprising a polymer film by an electron beam vacuum evaporation system that deposits an oxidized silicon as an evaporation source. SOLUTION: The vapor deposited film includes: the base material comprising a polymer film; and the inorganic compound layer that is formed by depositing an SiOx film by an electron beam vacuum evaporation method on at least one surface of the base material. The O/Si ratio of the inorganic compound layer is controlled to be 1.65-1.95, and the difference between the two extreme values in the O/Si ratio distribution in the width direction of the base material is controlled to be 0.1 or less. COPYRIGHT: (C)2012,JPO&INPIT |
