| 摘要 |
<p>A non-volatile semiconductor memory cell (300) with dual functions includes a substrate, a first gate (313-1), a second gate (313-2), a third gate (313-3), a charge storage layer (314), a first diffusion region (311-1), a second diffusion region (311-2), and a third diffusion region (311-3). The second gate (313-2) and the third gate (313-3) are used for receiving a first voltage corresponding to a one-time programming function of the dual function and a second voltage corresponding to a multi-time programming function of the dual function. The first diffusion region (311-1) is used for receiving a third voltage corresponding to the one-time programming function and a fourth voltage corresponding to the multi-time programming function. The second diffusion region (311-2) is used for receiving a fifth voltage corresponding to the multi-time programming function.</p> |
