发明名称 Memory protection
摘要 An integrated-circuit device 1 comprises a processor 7, non-volatile memory 13, non-volatile memory control logic 20, and memory protection logic 9. The memory protection logic 9 is arranged to control access to a protectable region of the non volatile memory 13 in dependence on protection configuration data stored in a protection-configuration region of the non-volatile memory. The device 1 is arranged to store, in the protection-configuration region, one or more values that define the protectable region or that define a protectable region of volatile memory. The non-volatile memory control logic 20 is arranged to prevent writing to any portion of the protection-configuration region unless that portion is in an erased state. The non-volatile memory control logic 20 is further arranged to allow the protection-configuration region to be erased only if the protectable region is in an erased state. The protectable region of non-volatile memory or volatile memory may be variable and defined by one or more addresses stored in the protection-configuration region.
申请公布号 GB2513727(A) 申请公布日期 2014.11.05
申请号 GB20140005811 申请日期 2012.06.27
申请人 NORDIC SEMICONDUCTOR ASA 发明人 FRANK BERNTSEN;OLA MARVIK;LASSE OLSEN;JOEL DAVID STAPLETON
分类号 G06F12/14;G06F21/79;G11C16/22 主分类号 G06F12/14
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