发明名称 半導体装置、X線カメラ及び電子機器
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor device capable of having a large signal amplitude value and enlarging a range where an input-output relation operates linearly while preventing a signal writing time from becoming longer, and to provide a method of driving the same. SOLUTION: In a semiconductor device having an amplification transistor and a bias transistor, a discharge transistor is provided to perform pre-discharge. Alternatively, in the semiconductor device having the amplification transistor and the bias transistor, a potential of a bias side power line connected to the bias transistor is approached to a potential of an amplification side power line connected to the amplification transistor to perform pre-discharge. COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP5619122(B2) 申请公布日期 2014.11.05
申请号 JP20120276807 申请日期 2012.12.19
申请人 发明人
分类号 H04N5/374;H01L27/146;H04N5/378 主分类号 H04N5/374
代理机构 代理人
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