| 摘要 |
PROBLEM TO BE SOLVED: To provide a silicon single crystal wafer which does not disturb electric characteristics in a device process. SOLUTION: A silicon single crystal wafer is manufactured from a silicon single crystal which is pulled up from a silicon molten liquid in a quartz crucible 12b by the Czochralski method and carbon-doped. A ratio (Cmax/Cmin) of a maximum value (Cmax) and a minimum value (Cmin) of the in-plane distribution of carbon concentration is 1.00 or more and 1.07 or less and the carbon concentration is settled within the range of 1×10<SP POS="POST">16</SP>atoms/cm<SP POS="POST">3</SP>or more and 5×10<SP POS="POST">16</SP>atoms/cm<SP POS="POST">3</SP>or less. COPYRIGHT: (C)2013,JPO&INPIT |
