Polishing solution for copper polishing, and polishing method using same

摘要

The polishing solution for copper polishing of the invention comprises a first organic acid component which is at least one type selected from among an organic acid containing a hydroxyl group, an organic acid salt and an organic acid anhydride, an inorganic acid component which is at least one type selected from among a dibasic or greater inorganic acid and an inorganic acid salt, an amino acid, a protective film-forming agent, an abrasive grain, an oxidizing agent and water, wherein the inorganic acid component content in terms of inorganic acid is 0.15 mass % or greater, the amino acid content is 0.30 mass % or greater, the protective film-forming agent content is 0.10 mass % or greater, based on the entire polishing solution for copper polishing, and the ratio of the first organic acid component content in terms of organic acid with respect to the protective film-forming agent content is at least 1.5.

主权项

1. A polishing method comprising a step in which a copper-containing metal film is polished using a polishing solution to remove at least a portion of the copper-containing metal film at a polishing rate of 30,000 Å/min or greater,
the polishing solution comprising: a first organic acid component which is at least one type selected from among an organic acid containing a hydroxyl group, a salt of the organic acid and an anhydride of the organic acid; an inorganic acid component which is at least one type selected from among a dibasic or greater inorganic acid and a salt of the inorganic acid; an amino acid; a protective film-forming agent; an abrasive grain; an oxidizing agent; and water, wherein a content of the inorganic acid component in terms of inorganic acid is 0.15 mass % or greater, a content of the amino acid is 0.30 mass % or greater, a content of the protective film-forming agent is 0.10 mass % or greater, based on an entire polishing solution, and a ratio of a content of the first organic acid component in terms of organic acid with respect to a content of the protective film-forming agent is at least 1.5.