| 发明名称 |
Method for fabricating MOS transistor |
| 摘要 |
A method for fabricating metal-oxide semiconductor (MOS) transistor is disclosed. The method includes the steps of: providing a semiconductor substrate having a silicide thereon; performing a first rapid thermal process to drive-in platinum from a surface of the silicide into the silicide; and removing un-reacted platinum in the first rapid thermal process. |
| 申请公布号 |
US8877635(B2) |
申请公布日期 |
2014.11.04 |
| 申请号 |
US201313913535 |
申请日期 |
2013.06.10 |
| 申请人 |
United Microelectronics Corp. |
发明人 |
Lai Kuo-Chih;Ho Nien-Ting;Huang Shu Min;Liao Bor-Shyang;Hsu Chia Chang |
| 分类号 |
H01L21/44;H01L21/285;H01L21/02;H01L29/66;H01L21/28;H01L21/324 |
主分类号 |
H01L21/44 |
| 代理机构 |
|
代理人 |
Hsu Winston;Margo Scott |
| 主权项 |
1. A method for fabricating metal-oxide semiconductor (MOS) transistor, comprising:
forming a silicide on a semiconductor substrate; after forming the silicide, performing a first rapid thermal process to drive-in platinum from a surface of the silicide into the silicide; and removing un-reacted platinum in the first rapid thermal process. |
| 地址 |
Science-Based Industrial Park, Hsin-Chu TW |
