| 发明名称 | Semiconductor structures | ||
| 摘要 | Semiconductor structures including an etch stop material between a substrate and a stack of alternating insulating materials and first conductive materials, wherein the etch stop material comprises an amorphous aluminum oxide on the substrate and a crystalline aluminum oxide on the amorphous aluminum oxide; a channel material extending through the stack; and a second conductive material between the channel material and at least one of the first conductive materials in the stack of alternating insulating materials and first conductive materials, wherein the second conductive material is not between the channel material and the etch stop material. Also disclosed are methods of fabricating such semiconductor structures. | ||
| 申请公布号 | US8877624(B2) | 申请公布日期 | 2014.11.04 |
| 申请号 | US201313738457 | 申请日期 | 2013.01.10 |
| 申请人 | Micron Technology, Inc. | 发明人 | Hull Jeffery B.;Meldrim John M. |
| 分类号 | H01L21/3205;H01L29/40 | 主分类号 | H01L21/3205 |
| 代理机构 | TraskBritt | 代理人 | TraskBritt |
| 主权项 | 1. A semiconductor structure, comprising: an etch stop material between a substrate and a stack of alternating insulating materials and first conductive materials, the etch stop material comprising an amorphous aluminum oxide on the substrate and a crystalline aluminum oxide on the amorphous aluminum oxide; a channel material extending through the stack and into at least a portion of the etch stop material; and a second conductive material between the channel material and at least one of the first conductive materials in the stack of alternating insulating materials and first conductive materials, wherein the second conductive material is not between the channel material and the etch stop material. | ||
| 地址 | Boise ID US | ||