Low resistivity gate conductor

摘要

Embodiments of the invention provide an approach for bottom-up growth of a low resistivity gate conductor. Specifically, a low resistivity metal (e.g., aluminum or cobalt) is selectively grown directly over metal layers in a set of gate trenches using a chemical vapor deposition or atomic layer deposition process to form the gate conductor.

主权项

1. A method for forming a device, the method comprising:
forming a set of trenches in a dielectric material; forming a low-resistivity gate conductor atop each of a set of metal layers in each of the set of trenches, the low-resistivity gate conductor directly abutting a set of sidewall spacers of the set of trenches; and forming a capping layer over the low-resistivity gate conductor.