发明名称 Method for manufacturing bonded substrate having an insulator layer in part of bonded substrate
摘要 A method for manufacturing a bonded substrate that has an insulator layer in part of the bonded substrate includes: partially forming a porous layer or forming a porous layer whose thickness partially varies on a bonding surface of the base substrate; performing a heat treatment to the base substrate having the porous layer formed thereon to change the porous layer into the insulator layer, and thereby forming the insulator layer whose thickness partially varies on the bonding surface of the base substrate; removing the insulator layer whose thickness varies by an amount corresponding to a thickness of a small-thickness portion by etching; bonding the bonding surface of the base substrate on which an unetched remaining insulator layer is exposed to a bond substrate; and reducing a thickness of the bonded bond substrate and thereby forming a thin film layer.
申请公布号 US8877609(B2) 申请公布日期 2014.11.04
申请号 US201214007584 申请日期 2012.04.10
申请人 Shin-Etsu Handotai Co., Ltd. 发明人 Ohtsuki Tsuyoshi;Qu Wei Feng;Tahara Fumio;Ooi Yuuki;Mitani Kiyoshi
分类号 H01L21/762;H01L21/84;H01L27/12 主分类号 H01L21/762
代理机构 Oliff PLC 代理人 Oliff PLC
主权项 1. A method for manufacturing a bonded substrate that is formed by bonding a base substrate to a bond substrate and has an insulator layer in part of the bonded substrate, the method comprising at least: a porous layer forming step of partially forming a porous layer or forming a porous layer whose thickness partially varies on a bonding surface of the base substrate; an insulator layer forming step of performing a heat treatment to the base substrate having the porous layer formed thereon to change the porous layer into the insulator layer, and thereby forming the insulator layer whose thickness partially varies on the bonding surface of the base substrate; an insulator layer removing step of removing the insulator layer whose thickness varies by an amount corresponding to a thickness of a small-thickness portion by etching, and thereby exposing the unetched remaining insulator layer on part of the bonding surface of the base substrate; a bonding step of bonding the bonding surface of the base substrate on which the unetched remaining insulator layer is exposed to the bond substrate; and a thin film forming step of reducing a thickness of the bonded bond substrate and thereby forming a thin film layer.
地址 Tokyo JP