Semiconductor device and manufacturing method thereof

摘要

A semiconductor device and method for manufacturing the same are provided. A substrate with an active area and a first interlayer dielectric formed over the substrate is provided. The first interlayer dielectric has a first opening exposing a portion of a surface of the active area, the first opening being filled with a fill material. A second interlayer dielectric is formed over the first interlayer dielectric with a second opening substantially exposing an upper portion of the fill material in the corresponding first opening. The fill material is then removed and the first opening and the second opening are filled with a conductive material to form a contact.

主权项

1. A method for manufacturing a semiconductor device comprising:
providing a substrate with an active area and a first interlayer dielectric formed over the substrate, the first interlayer dielectric having a first opening penetrating through the first interlayer dielectric so as to expose a portion of a surface of the active area; filling the first opening with a fill material, wherein, the fill material can be selectively removed with respect to the material of the first interlayer dielectric; forming a second interlayer dielectric over the first interlayer dielectric, the second interlayer dielectric having a second opening penetrating through the second interlayer dielectric so as to substantially expose an upper portion of the fill material in the corresponding first opening; removing the fill material; and filling the first opening and the second opening with a conductive material so as to form a contact.