Semiconductor device and method of forming uniform height insulating layer over interposer frame as standoff for semiconductor die

摘要

A semiconductor device has an interposer frame having a die attach area. A uniform height insulating layer is formed over the interposer frame at corners of the die attach area. The insulating layer can be formed as rectangular or circular pillars at the corners of the die attach area. The insulating layer can also be formed in a central region of the die attach area. A semiconductor die has a plurality of bumps formed over an active surface of the semiconductor die. The bumps can have a non-fusible portion and fusible portion. The semiconductor die is mounted over the insulating layer which provides a uniform standoff distance between the semiconductor die and interposer frame. The bumps of the semiconductor die are bonded to the interposer frame. An encapsulant is deposited over the semiconductor die and interposer frame and between the semiconductor die and interposer frame.

主权项

1. A method of making a semiconductor device, comprising:
providing an interposer frame including,
(a) providing a substrate,(b) forming a conductive via in the substrate, and(c) forming a first conductive layer over the conductive via; forming a first insulating layer over the first conductive layer; forming a second conductive layer over the substrate opposite the first conductive layer, the second conductive layer being electrically connected to the conductive via; forming a second insulating layer over the second conductive layer; forming a third conductive layer over the second insulating layer electrically connected to the second conductive layer; providing a die attach area on the substrate; forming a plurality of discrete uniform height pillars over the interposer frame at corners of the die attach area with physical space extending to the interposer frame between the discrete uniform height pillars; providing a semiconductor die including a plurality of bumps; disposing the semiconductor die over the discrete uniform height pillars which provides a fixed uniform standoff distance between the semiconductor die and the interposer frame; bonding the bumps of the semiconductor die to the first conductive layer of the interposer frame while the discrete uniform height pillars maintain the fixed uniform standoff distance; and depositing an encapsulant between the semiconductor die and interposer frame by injecting the encapsulant through the physical space between the discrete uniform height pillars.