| 发明名称 | Reflective mask and method of making same | ||
| 摘要 | A reflective mask is described. The mask includes a low thermal expansion material (LTEM) substrate, a conductive layer deposited on a first surface of the LTEM substrate, a stack of reflective multilayers (ML) deposited on a second surface of the LTEM substrate, a capping layer deposited on the stack of reflective ML, a first absorption layer deposited on the first capping layer, a main pattern, and a border ditch. The border ditch reaches to the capping layer, a second absorption layer deposited inside the border ditch, and the second absorption layer contacts the capping layer. In some instances, the border ditch crosses the capping layer and partially enters the reflective multilayer. | ||
| 申请公布号 | US8877409(B2) | 申请公布日期 | 2014.11.04 |
| 申请号 | US201213451705 | 申请日期 | 2012.04.20 |
| 申请人 | Taiwan Semiconductor Manufacturing Company, Ltd. | 发明人 | Hsu Pei-Cheng;Shih Chih-Tsung;Chen Chia-Jen;Wu Tsiao-Chen;Yu Shinn-Sheng;Lee Hsin-Chang;Yen Anthony |
| 分类号 | G03F1/24 | 主分类号 | G03F1/24 |
| 代理机构 | Haynes and Boone, LLP | 代理人 | Haynes and Boone, LLP |
| 主权项 | 1. A mask comprising: a low thermal expansion material (LTEM) substrate; a conductive layer deposited on a first surface of the LTEM substrate; a stack of reflective multilayers (ML) deposited on a second surface of the LTEM substrate; a capping layer deposited on the stack of reflective ML; a first absorption layer deposited on the capping layer; a main pattern and a border ditch, wherein the border ditch extends toward the LTEM substrate to the capping layer without extending beyond the capping layer towards the LTEM substrate; and a second absorption layer in the border ditch. | ||
| 地址 | Hsin-Chu TW | ||