Thin film capacitors on metal foils and methods of manufacturing same

摘要

Disclosed are methods of making a dielectric on a metal foil, and a method of making a large area capacitor that includes a dielectric on a metal foil. A first dielectric layer is formed over the metal foil by physical vapor deposition, and a dielectric precursor layer is formed over the first dielectric layer by chemical solution deposition. The metal foil, first dielectric layer and dielectric precursor layer are prefired at a prefiring temperature in the range of 350 to 650° C. The prefired dielectric precursor layer, the first dielectric layer and the base metal foil are subsequently fired at a firing temperature in the range of 700 to 1200° C.

主权项

1. A method of making a dielectric, the method comprising:
forming a first dielectric layer over a metal foil by physical vapor deposition, wherein the first dielectric layer includes at least one of barium titanate or barium strontium titanate; forming a dielectric precursor layer by chemical solution deposition over the first dielectric layer; heating the dielectric precursor layer at a first temperature; heating the metal foil, the first dielectric layer, and the dielectric precursor layer in a low oxygen partial pressure environment at a second temperature greater than the first temperature to form a fired dielectric on the metal foil, wherein the fired dielectric includes at least one of crystalline barium titanate or crystalline barium strontium titanate; and after said heating the metal foil, the first dielectric layer, and the dielectric precursor layer, re-oxygenating the fired dielectric in an environment having a higher partial pressure of oxygen than the low oxygen partial pressure environment.