A SUBSIDIARY EQUIPMENT IN CHEMICAL VAPOR DEPOSITION METHOD FOR THE RELIABLE PRODUCTION OF HIGH QUALITY AND LARGE SIZED GRAPHENE

摘要

The present invention relates to a chemical vapor deposition (CVD) assistant device for growth of graphene having high quality and a large size. More specifically, the CVD assistant device is arranged in a quartz tube of a chemical vapor deposition apparatus. A substrate on which a thin metal plate is deposited is arranged in a vacant space, formed by a sealing part between two cover plates. Carbon and hydrogen gas flow through a gas inlet and a gas outlet which are formed on a certain portion of an outer circumferential side of the sealing part. Therefore, the CVD assistant device can qualitatively control gas in the minimum amount, and can prevent evaporation of the thin metal plate at high temperature.