Semiconductor memory device

摘要

A semiconductor memory device including a bit line, a word line, a transistor, and a capacitor is provided. The transistor includes source and drain electrodes; an oxide semiconductor film in contact with at least both top surfaces of the source and drain electrodes; a gate insulating film in contact with at least a top surface of the oxide semiconductor film; a gate electrode which overlaps with the oxide semiconductor film with the gate insulating film provided therebetween; and an insulating film covering the source and drain electrodes, the gate insulating film, and the gate electrode. The transistor is provided in a mesh of a netlike conductive film when seen from the above. Here, the drain electrode and the netlike conductive film serve as one and the other of a pair of capacitor electrodes of the capacitor. A dielectric film of the capacitor includes at least the insulating film.

主权项

1. A semiconductor memory device comprising:
a transistor comprising:
an electrode; andan oxide semiconductor film over a top surface of the electrode, wherein the oxide semiconductor film overlaps with and is electrically connected to the electrode; a dielectric film over the electrode and the oxide semiconductor film, wherein the dielectric film is in contact with a side surface of the electrode; a conductive film over the dielectric film; a capacitor comprising:
the electrode;the conductive film; andthe dielectric film between the side surface of the electrode and a side surface of the conductive film.