Solid-state imaging device

摘要

A purpose of the present invention is to provide a preferable separation structure of wells when a photoelectric conversion unit and a part of a peripheral circuit unit or a pixel circuit are separately formed on separate substrates and electrically connected to each other. To this end, a solid-state imaging device includes a plurality of pixels including a photoelectric conversion unit and a amplification transistor configured to amplify a signal generated by the photoelectric conversion unit; a first substrate on which a plurality of the photoelectric conversion units are disposed; and a second substrate on which a plurality of the amplification transistors are disposed. A well of a first conductivity type provided with a source region and a drain region of the amplification transistor is separated from a well, which is disposed adjacent to the well in at least one direction, of the first conductivity type provided with the source region and the drain region of the amplification transistor.

主权项

1. A solid-state imaging device comprising:
a plurality of pixels, each including a photoelectric conversion unit and a amplification transistor configured to amplify a signal generated by the photoelectric conversion unit; a first substrate on which the plurality of the photoelectric conversion units are disposed; and a second substrate on which the plurality of the amplification transistors are disposed, wherein a well of a first conductivity type provided with a source region and a drain region of the amplification transistor is isolated from another well of a first conductivity type which is disposed adjacent to the well in at least one direction, the another well is provided with a source region and a drain region of another amplification transistor, wherein, between the adjacent wells of the first conductivity type, by disposing a semiconductor region of a second conductivity type, the wells of the first conductivity type are isolated from each other, and wherein the semiconductor region of the second conductivity type covers a surface which is opposite to a surface on which a gate of the amplification transistor of the two wells of the first conductivity type is provided and extends to a region between the two wells of the first conductivity type.