Method of processing surface of high-performance materials which are difficult to process

摘要

Disclosed is a processing method which can achieve a high processing rate, and is capable of making a surface smooth. In order to achieve this an SiC substrate is arranged in a potassium hydroxide solution containing hydrogen peroxide, and ultraviolent radiation is irradiated on the surface of the SiC substrate. An SiO2 layer is formed on the surface of the SiC substrate due to the irradiation of ultraviolet radiation, and this SiO2 layer is chemically removed by means of the potassium hydroxide solution, and also removed by a synthetic quartz surface plate.

主权项

1. A method of processing a surface of high-performance material work piece which is difficult to process, comprising:
irradiating ultraviolet light, through a processing member, onto the surface of the work piece, wherein the surface is arranged in an alkaline solution, and wherein the ultraviolet light has energy greater than a bandgap of the work piece being irradiated; and contacting the surface of the work piece with a processing member consisting of a synthetic quartz or sapphire; and during said irradiating, subjecting the surface and the processing member to relative displacement while in contact; and wherein the ultraviolet light is irradiated at the work piece surface via the processing member.