Semiconductor device having a buffer material and stiffener

摘要

Semiconductor devices are described that include a semiconductor device having multiple, stacked die on a substrate (e.g., a semiconductor wafer). In one or more implementations, wafer-level package devices that employ example techniques in accordance with the present disclosure include an ultra-thin semiconductor wafer with metallization and vias formed in the wafer and an oxide layer on the surface of the wafer, an integrated circuit chip placed on the semiconductor wafer, an underfill layer between the integrated circuit chip and the semiconductor wafer, a buffer material formed on the semiconductor wafer, the underfill layer, and at least one side of the integrated circuit chip, an adhesive layer placed on the buffer layer and the integrated circuit chip, and a stiffener layer placed on the adhesive layer. The semiconductor device may then be segmented into individual semiconductor chip packages.

主权项

1. A semiconductor device comprising:
a processed semiconductor wafer, where the semiconductor wafer includes at least one via; a dielectric layer disposed on at least a portion of the semiconductor wafer; an integrated circuit chip coupled to the semiconductor wafer; an underfill layer disposed between the semiconductor wafer and the integrated circuit chip; a buffer material layer disposed on at least a portion of the dielectric layer, the underfill layer, and the semiconductor wafer, and covering at least a portion of the integrated circuit chip; an adhesive material disposed on the buffer material layer and the integrated circuit chip; a stiffener layer disposed on the adhesive material; and at least one solder bump formed on the processed semiconductor wafer.