| 发明名称 | Pickup device structure within a device isolation region | ||
| 摘要 | A device includes a device isolation region formed into a semiconductor substrate, the device isolation region having gaps for photo-sensitive devices, a dummy gate structure formed over the substrate, the dummy gate structure comprising at least one structure that partially surrounds a doped pickup region formed into the device isolation region, and a via connected to the doped pickup region. | ||
| 申请公布号 | US8878242(B1) | 申请公布日期 | 2014.11.04 |
| 申请号 | US201313936996 | 申请日期 | 2013.07.08 |
| 申请人 | Taiwan Semiconductor Manufacturing Company, Ltd. | 发明人 | Kao Min-Feng;Yaung Dun-Nian;Liu Jen-Cheng;Hsu Tzu-Hsuan;Chen Szu-Ying;Hsu Wei-Cheng;Tseng Hsiao-Hui |
| 分类号 | H01L27/146 | 主分类号 | H01L27/146 |
| 代理机构 | Haynes and Boone, LLP | 代理人 | Haynes and Boone, LLP |
| 主权项 | 1. A device comprising: a device isolation region formed into a semiconductor substrate, the device isolation region having gaps; one or more photo-sensitive devices in the gaps; a dummy gate structure formed over the substrate; a doped pickup region formed into the device isolation region, wherein the dummy gate structure includes at least one structure that partially surrounds the doped pickup region; and a via connected to the doped pickup region. | ||
| 地址 | Hsin-Chu TW | ||