摘要 |
A method of manufacturing a thin film transistor liquid crystal display (TFT-LCD) array substrate including a gate line and a data line that define a pixel region, wherein the pixel region is provided with a thin film transistor, a pixel electrode formed on the array substrate, and a storage electrode of transparent structure that overlaps with the pixel electrode and, together with the pixel electrode, constitutes a storage capacitor. |
主权项 |
1. A method of manufacturing a thin film transistor liquid crystal display (TFT-LCD) array substrate, comprising steps of:
Step 1, depositing, successively, a light-blocking metal film, a first insulating layer, a semiconductor film, and a doped semiconductor film on a base substrate, and forming a pattern including a light-blocking metal layer and an active layer with a patterning process; Step 2, depositing, successively, a transparent conductive film and a source and drain metal film on the base substrate after Step 1, and forming a pattern including a data line, a drain electrode, a source electrode, a thin film transistor (TFT) channel region, and a pixel electrode with a patterning process, wherein the drain electrode is directly connected with the pixel electrode through the transparent conductive layer, and the transparent conductive layer below the drain electrode is continuously formed together with the pixel electrode; Step 3, depositing, successively, a second insulating layer and a gate metal film on the base substrate after Step 2, and forming a pattern including a gate electrode and a gate line with a patterning process, wherein the gate electrode is located above the TFT channel region; and Step 4, depositing, successively, a third insulating layer and a transparent conductive film on the base substrate after Step 3, and forming a pattern including a storage electrode, a gate pad via hole, and a data pad via hole, wherein the storage electrode overlaps with the pixel electrode and, together with the pixel electrode, constitutes a storage capacitor. |