High electron mobility transistors and methods of fabricating the same

摘要

A High electron mobility transistor (HEMT) includes a source electrode, a gate electrode, a drain electrode, a channel forming layer in which a two-dimensional electron gas (2DEG) channel is induced, and a channel supplying layer for inducing the 2DEG channel in the channel forming layer. The source electrode and the drain electrode are located on the channel supplying layer. A channel increase layer is between the channel supplying layer and the source and drain electrodes. A thickness of the channel supplying layer is less than about 15 nm.

主权项

1. A high electron mobility transistor (HEMT), comprising:
a channel forming layer; a channel supplying layer on the channel forming layer, the channel supplying layer configured to induce a two-dimensional electron gas (2DEG) channel in the channel forming layer; a channel increase layer on the channel supplying layer, the channel increase layer defining an opening that exposes a portion of the channel supplying layer; source and drain electrodes on the channel increase layer; and a gate electrode on a first part of the portion of the channel supplying layer exposed by the opening of the channel increase layer, wherein
the channel forming layer includes a lightly doped drain (LDD) region between the gate electrode and the drain electrode,the LDD region of the channel forming layer is below a second part of the portion of the channel supplying layer exposed by the opening of the channel increase layer, anda segment of the channel increase layer extends from contacting a sidewall of the gate electrode to a region between the source electrode and the channel supplying layer.