| 发明名称 | Systems and methods for thin-film deposition of metal oxides using excited nitrogen-oxygen species | ||
| 摘要 | The present invention relates to a process and system for depositing a thin film onto a substrate. One aspect of the invention is depositing a thin film metal oxide layer using atomic layer deposition (ALD). | ||
| 申请公布号 | US8877655(B2) | 申请公布日期 | 2014.11.04 |
| 申请号 | US201113102980 | 申请日期 | 2011.05.06 |
| 申请人 | ASM America, Inc. | 发明人 | Shero Eric J.;Raisanen Petri I.;Jung Sung-Hoon;Wang Chang-Gong |
| 分类号 | H01L21/31;H01L21/469;H01L21/00;C23C16/40;C23C16/30;H01L21/02;H01L29/51;C23C16/455;H01L21/28;H01L29/78 | 主分类号 | H01L21/31 |
| 代理机构 | Snell & Wilmer LLP | 代理人 | Snell & Wilmer LLP |
| 主权项 | 1. A method for depositing a film on a substrate that is within a reaction chamber, the method comprising applying an atomic layer deposition cycle to the substrate, the cycle comprising: exposing the substrate to a precursor gas for a precursor pulse interval and then removing the precursor gas; and exposing the substrate to an oxidizer comprising an oxidant gas and a nitrogen-containing species gas comprising activated ionic or radical species for an oxidation pulse interval and then removing the oxidizer; prior to introducing the nitrogen-containing species to the reaction chamber, monitoring the nitrogen-containing species; and adjusting one or more process parameters based on the step of monitoring. | ||
| 地址 | Phoenix AZ US | ||