| 发明名称 | Method of polishing a silicon wafer | ||
| 摘要 | This invention is to provide a method of polishing a silicon wafer wherein a high flatness can be attained likewise the conventional polishing method and further the occurrence of defects due to the remaining of substances included in the polishing solution on the surface of the wafer can be suppressed as well as a polished silicon wafer. The method of polishing a silicon wafer by supplying a polishing solution containing abrasive grains onto a surface of a polishing pad and then relatively sliding the polishing pad to a silicon wafer to polish the surface of the silicon wafer, is characterized in that the number of abrasive grains included in the polishing solution is controlled to not more than 5×1013 grains/cm3. | ||
| 申请公布号 | US8877643(B2) | 申请公布日期 | 2014.11.04 |
| 申请号 | US201013376259 | 申请日期 | 2010.05.28 |
| 申请人 | Sumco Corporation | 发明人 | Matsuda Shuhei;Iwashita Tetsuro;Tanimoto Ryuichi;Takushima Takeru;Katoh Takeo |
| 分类号 | H01L21/461;H01L21/02;B24B37/04;C09G1/02 | 主分类号 | H01L21/461 |
| 代理机构 | Pepper Hamilton LLP | 代理人 | Engellenner Thomas J.;Mollaaghababa Reza;Pepper Hamilton LLP |
| 主权项 | 1. A method of polishing a silicon wafer by supplying a polishing solution containing abrasive grains onto a surface of a polishing pad and then relatively sliding the polishing pad to a silicon wafer to polish the silicon surface of the silicon wafer, characterized in that the number of abrasive grains included in the polishing solution is controlled to not more than 5×1013 grains/cm3 and wherein the abrasive grains have a mean primary grain size of 10-70 nm as calculated according to BET method. | ||
| 地址 | Tokyo JP | ||