| 发明名称 |
Memory array including multi-state memory devices |
| 摘要 |
A data storage system including a memory array including a plurality of memory devices programmable in greater than two states. A memory control module may control operations of the memory array, and an encoder module may encode input data for storing to the memory array. The memory array may be an m×n memory array, and the memory control module may control operations of storing data to and retrieving data from the memory array. |
| 申请公布号 |
US8880782(B2) |
申请公布日期 |
2014.11.04 |
| 申请号 |
US201113277837 |
申请日期 |
2011.10.20 |
| 申请人 |
Hewlett Packard Development Company, L. P. |
发明人 |
Ordentlich Erik;Roth Ron M.;Seroussi Gadiel |
| 分类号 |
G06F12/00;G11C13/00;G11C11/56;G11C7/10;G11C16/00 |
主分类号 |
G06F12/00 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A data storage system comprising:
a memory array including a plurality of memory devices programmable in greater than two states, wherein the memory array is an m×n memory array; a memory control module, executed by a processor, to control operations of storing data to and retrieving data from the m×n memory array; and an encoder module to encode input data for storing to the m×n memory array such that an amount of current leaking through half-selected memory devices in a selected row and a selected column of the m×n memory array is, respectively, less than or equal to nC/2 and mC/2, where C is a largest sum of half-select current magnitudes for pairs of complementary states. |
| 地址 |
Houston TX US |
