Direct multi-level cell programming

摘要

A data storage device includes a controller coupled to a non-volatile memory having a three-dimensional (3D) configuration. The non-volatile memory includes a group of storage elements. Each storage element is configured to store multiple data bits. Data is sent from the controller to the non-volatile memory and first bits corresponding to a first portion of the data are stored into the group of storage elements during a first write stage. Each storage element of the group of storage elements stores at least one bit of the first bits upon completion of the first write stage. Second bits corresponding to a second portion of the data are sent to a second memory without sending the first bits to the second memory. The second bits are retrieved from the second memory and at least the second bits are stored into the group of storage elements during a second write stage.

主权项

1. A method comprising:
in a data storage device that includes a controller coupled to a non-volatile memory having a three-dimensional (3D) configuration and circuitry associated with operation of memory cells of the non-volatile memory, the non-volatile memory including a group of storage elements, wherein each storage element includes a memory cell of the non-volatile memory that is configured to store multiple data bits, performing:
sending data from the controller to the non-volatile memory;storing first bits corresponding to a first portion of the data into the group of storage elements during a first write stage, wherein each storage element of the group of storage elements stores at least one bit of the first bits upon completion of the first write stage;sending second bits corresponding to a second portion of the data to a second memory without sending the first bits to the second memory; andretrieving the second bits from the second memory and storing at least the second bits into the group of storage elements during a second write stage.