发明名称 Light emitting device, method of manufacturing the light emitting device, light emitting device package, and lighting system
摘要 A light emitting device includes a substrate, at least one electrode, a first contact layer, a second contact layer, a light emitting structure layer, and an electrode layer. The electrode is disposed through the substrate. The first contact layer is disposed on a top surface of the substrate and electrically connected to the electrode. The second contact layer is disposed on a bottom surface of the substrate and electrically connected to the electrode. The light emitting structure layer is disposed above the substrate at a distance from the substrate and electrically connected to the first contact layer. The light emitting structure layer includes a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer. The electrode layer is disposed on the light emitting structure layer.
申请公布号 US8878212(B2) 申请公布日期 2014.11.04
申请号 US201113020041 申请日期 2011.02.03
申请人 LG Innotek Co., Ltd. 发明人 Lim Woo Sik;Kim Sung Kyoon;Choo Sung Ho;Beom Hee Young
分类号 H01L33/00;H01L33/48;H01L33/62;H01L33/60 主分类号 H01L33/00
代理机构 KED & Associates, LLP 代理人 KED & Associates, LLP
主权项 1. A light emitting device comprising: a substrate; at least one first electrode disposed through the substrate; a first contact layer disposed on a top surface of the substrate and being electrically connected to the first electrode; a second contact layer disposed on a bottom surface of the substrate and being electrically connected to the first electrode; a light emitting structure layer disposed above the substrate spaced apart from the substrate and being electrically connected to the first contact layer; a transparent conductive layer disposed between the substrate and the light emitting structure layer; and a second electrode layer on a top surface of the light emitting structure layer, wherein the light emitting structure layer includes a first conductive semiconductor layer under the second electrode layer, a second conductive semiconductor layer under the first conductive semiconductor layer and an active layer between the first conductive semiconductor layer and the second conductive semiconductor layer, wherein the transparent conductive layer directly contacts the first contact layer, wherein the transparent conductive layer is electrically connected to the first contact layer and the second conductive semiconductor layer, and wherein the first contact layer is located at a higher position than the top surface of the substrate.
地址 Seoul KR