Methods of forming a three-dimensional semiconductor device with a dual stress channel and the resulting device

摘要

One method includes forming first and second spaced-apart trenches extending at least partially into a semiconducting substrate defining a fin structure for the device, forming a stress-inducing material having a first type of stress in the first trench, forming a second stress-inducing material in the second trench, the second stress-inducing material having a second stress that is a different than the first type of stress, and forming a gate structure around a portion of the fin structure. One device includes first and second spaced-apart trenches in a semiconducting substrate defining at least a portion of a fin for the device, a stress-inducing material having a first type of stress in the first trench, a second stress-inducing material in the second trench, the second stress-inducing material having a second stress that is a different type than the first stress, and a gate structure around a portion of the fin structure.

主权项

1. A method of forming a device, comprising:
forming first and second spaced-apart trenches that extend at least partially into a semiconducting substrate, said first and second trenches defining a fin structure for said device; forming a first stress-inducing material having a first type of stress in said first trench; forming a second stress-inducing material in said second trench, said second stress-inducing material having a second stress that is a different type than said first type of stress; and forming a gate structure around a portion of said fin structure.