Packaged semiconductor devices, methods of packaging semiconductor devices, and PoP devices

摘要

Packaged semiconductor devices, methods of packaging semiconductor devices, and package-on-package (PoP) devices are disclosed. In some embodiments, a method of packaging a semiconductor device includes forming through-package vias (TPVs) over a carrier, and coupling a semiconductor device to the carrier. The semiconductor device includes contact pads disposed on a surface thereof and an insulating material disposed over the contact pads. A molding material is formed over the carrier between the TPVs and the semiconductor device. Openings are formed in the insulating material using a laser drilling process over the contact pads, and a redistribution layer (RDL) is formed over the insulating material and the openings in the insulating material. A portion of the RDL is coupled to a top surface of each of the contact pads.

主权项

1. A method of packaging a semiconductor device, the method comprising:
forming a plurality of through-package vias (TPVs) over a carrier; coupling a semiconductor device to the carrier, the semiconductor device including a plurality of contact pads disposed on a surface thereof and an insulating material disposed over the plurality of contact pads; forming a molding material over the carrier between the plurality of TPVs and the semiconductor device; forming a plurality of openings in the insulating material using a laser drilling process, each of the plurality of openings being disposed over one of the plurality of contact pads; and forming a redistribution layer (RDL) over the insulating material and the plurality of openings in the insulating material, wherein a portion of the RDL is coupled to a top surface of each of the plurality of contact pads.